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dc.contributor.authorLaw, Kam Tuen
dc.contributor.authorLee, Patrick A.
dc.contributor.authorSeng, C. Y.
dc.contributor.authorNg, Tai-Kai
dc.date.accessioned2010-07-15T18:03:16Z
dc.date.available2010-07-15T18:03:16Z
dc.date.issued2010-01
dc.date.submitted2009-12
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/1721.1/56577
dc.description.abstractA quantum dot coupled to two helical edge states of a two-dimensional topological insulator through electron tunnelings is studied. We show that if the electron interactions on the edge states are repulsive, with Luttinger liquid parameter K<1, the system reaches a stable two-channel Kondo fixed point at low temperatures. This is in contrast to the Luttinger liquid leads case in which K<1/2 is needed. This two-channel fixed point is described by a boundary sine-Gordon Hamiltonian with a K dependent boundary term. The impurity entropy, the impurity specific heat and the conductance are calculated.en_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.81.041305en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleQuantum dot in a two-dimensional topological insulator: The two-channel Kondo fixed pointen_US
dc.typeArticleen_US
dc.identifier.citationLaw, K. T. et al. “Quantum dot in a two-dimensional topological insulator: The two-channel Kondo fixed point.” Physical Review B 81.4 (2010): 041305. © 2010 American Physical Society.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physics
dc.contributor.approverLee, Patrick A.
dc.contributor.mitauthorLaw, Kam Tuen
dc.contributor.mitauthorLee, Patrick A.
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsLaw, K. T.; Seng, C. Y.; Lee, Patrick A.; Ng, T. K.en
dc.identifier.orcidhttps://orcid.org/0000-0001-7809-8157
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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