Si[subscript C]C[subscript Si] antisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching
Author(s)Ceresoli, Davide; Gerstmann, Uwe; Seitsonen, A. P.; Mauri, Francesco; von Bardeleben, H. J.; Cantin, J. L.; Garcia Lopez, J.; ... Show more Show less
SiCCSi antisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching
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The nearest-neighbor antisite pair defects in 4H-SiC, 6H-SiC, and 3C-SiC single crystals have been identified using electron paramagnetic resonance spectroscopy in combination with a nonperturbative ab initio scheme for the electronic g tensor. Based on the theoretical predictions, the positively charged defect has been found experimentally also in the cubic 3C-SiC polytype where it is characterized by spin 1/2 and highly anisotropic g values of g[subscript xx]=2.0030, g[subscript yy]=2.0241, and g[subscript zz]=2.0390 within C1[subscript h] symmetry. The exceptional large g values are explained by details of the spin-orbit coupling causing a strongly anisotropic quenching of the orbital angular momentum of the p-like unpaired electron.
DepartmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
Physical Review B
American Physical Society
Gerstmann, U. et al. “Si[subscript C]C[subscript Si] antisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching.” Physical Review B 81.19 (2010): 195208. © 2010 The American Physical Society.
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