Exciton front propagation in photoexcited GaAs quantum wells
Author(s)
Yang, Sen; Butov, L. V.; Simons, B. D.; Gossard, A. C.; Levitov, Leonid
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We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton rings in exciton emission patterns. The interfaces preserve their integrity during expansion, remaining as sharp as in the steady state, which indicates that the dynamics is controlled by carrier transport. The front propagation velocity is measured and compared to theoretical model. The measurements of expanding and collapsing exciton rings afford a contactless method for probing the electron and hole transport.
Date issued
2010-03Department
Massachusetts Institute of Technology. Department of PhysicsJournal
Physical Review B
Publisher
American Physical Society
Citation
Yang, Sen et al. “Exciton front propagation in photoexcited GaAs quantum wells.” Physical Review B 81.11 (2010): 115320. © 2010 The American Physical Society
Version: Final published version
ISSN
1098-0121
1550-235X