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dc.contributor.authorKozinsky, Boris
dc.contributor.authorWee, Daehyun
dc.contributor.authorFornari, Marco
dc.contributor.authorMarzari, Nicola
dc.date.accessioned2010-09-30T15:51:49Z
dc.date.available2010-09-30T15:51:49Z
dc.date.issued2010-01
dc.date.submitted2009-12
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/58789
dc.description.abstractWe use ab initio computations to investigate the effect of filler ions on the properties of CoSb3 skutterudites. We analyze global and local structural effects of filling, using the Ba-filled system as an example. We show that the deformation of Sb network induced by the filler affects primarily nearest neighboring Sb sites around the filler site as the soft Sb rings accommodate the distortion. Rearrangement of Sb atoms affects the electronic band structure and we clarify the effect of this local strain on the band gap. We compute the phonon dispersions and identify the filler-dominated modes from the lowest-frequency optical modes at Gamma. Their weak dispersion across the Brillouin zone indicates that they are localized and a force-constant analysis shows that the filler vibration is strongly coupled with nearby Sb atoms.en_US
dc.description.sponsorshipMassachusetts Institute of Technology. Energy Initiativeen_US
dc.description.sponsorshipRobert Bosch GmbHen_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.81.045204en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleEffects of filling in CoSb[subscript 3]: Local structure, band gap, and phonons from first principlesen_US
dc.title.alternativeEffects of filling in CoSb3: Local structure, band gap, and phonons from first principlesen_US
dc.typeArticleen_US
dc.identifier.citationWee, Daehyun et al. “Effects of filling in CoSb[subscript 3] : Local structure, band gap, and phonons from first principles.” Physical Review B 81.4 (2010): 045204. © 2010 The American Physical Society.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.approverKozinsky, Boris
dc.contributor.mitauthorKozinsky, Boris
dc.contributor.mitauthorMarzari, Nicola
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsWee, Daehyun; Marzari, Nicola; Fornari, Marcoen
dc.identifier.orcidhttps://orcid.org/0000-0002-0638-539X
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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