An oscilloscope array for high-impedance device characterization

Author(s)
Stojanovic, Vladimir Marko; Chen, Fred Fu-Chin; Chandrakasan, Anantha P.
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Abstract
An equivalent time oscilloscope array is implemented in a 90 nm CMOS technology. A combination of adjustable termination, calibration circuitry and capacitance compensation enables driver bandwidths between 0.4 to 2 GHz for termination impedances of 20 Omega to 2 kOmega for extraction of S-parameters and delay characteristics of high impedance devices such as carbon nanotubes (CNTs) and graphene. Measurement results show that the capacitance compensation technique enhances the bandwidth by 3X for impedances between 2 kOmega and 20 kOmega.
Date issued
2009-11
URI
http://hdl.handle.net/1721.1/58952
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories
Journal
Proceedings of ESSCIRC, 2009
Publisher
Institute of Electrical and Electronics Engineers
Citation
Chen, F., A. Chandrakasan, and V. Stojanovic. “An oscilloscope array for high-impedance device characterization.” ESSCIRC, 2009. ESSCIRC '09. Proceedings of. 2009. 112-115. © 2009 IEEE
Version: Final published version
Other identifiers
INSPEC Accession Number: 10975379
ISBN
978-1-4244-4354-3
ISSN
1930-8833
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