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dc.contributor.authorAkinwande, Akintunde Ibitayo
dc.contributor.authorVelasquez-Garcia, Luis Fernando
dc.contributor.authorGassend, Blaise
dc.date.accessioned2010-10-14T16:08:15Z
dc.date.available2010-10-14T16:08:15Z
dc.date.issued2009-04
dc.date.submitted2008-08
dc.identifier.issn1057-7157
dc.identifier.otherINSPEC Accession Number: 10557844
dc.identifier.urihttp://hdl.handle.net/1721.1/59328
dc.description.abstractThis paper reports the design and experimental validation of an in-plane assembly method for centimeter-scale bulk-microfabricated components. The method uses mesoscaled deep-reactive-ion-etching (DRIE)-patterned cantilevers that deflect and lock into small v-shaped notches as a result of the hand-exerted rotation between the two components of the assembly. The assembly method is intended for MEMS arrays that necessitate a 3-D electrode structure because of their requirement for low leakage currents and high voltages. The advantages of the assembly method include the ability to decouple the process flow of the components, higher overall device yield, modularity, reassembly capability, and tolerance to differential thermal expansion. Both tapered and untapered cantilevers were studied. Modeling of the cantilever set shows that the springs provide low stiffness while the assembly process is in progress and high stiffness once the assembly is completed, which results in a robust assembly. In addition, analysis of the linearly tapered cantilever predicts that the optimal linearly tapered beam has a cantilever tip height equal to 37% of the cantilever base height, which results in more than a threefold increase in the clamping force for a given cantilever length and deflection, compared to the untapered case. The linear taper profile achieves 80% of the optimal nonlinear taper profile, which would be impractical to fabricate. Analysis of the experimental data reveals a biaxial assembly precision of 6.2-mum rms and a standard deviation of 0.6 mum for assembly repeatability. Electrical insulation was investigated using both thin-film coatings and insulating substrates. Leakage currents less than 1 nA at 2 kV were demonstrated. Finally, this paper provides selected experimental data of a gated MEMS electrospray array as an example of the application of the assembly method.en_US
dc.description.sponsorshipUnited States. Air Force Office of Scientific Researchen_US
dc.description.sponsorshipSpace and Naval Warfare Systems Center San Diego (U.S.) (Award N66001-04-1-8925)en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/JMEMS.2008.2011115en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceIEEEen_US
dc.subjecthigh-voltage MEMS packagingen_US
dc.subjectElectrosprayen_US
dc.subjectMEMS hand assemblyen_US
dc.titlePrecision in-plane hand assembly of bulk microfabricated components for high-voltage MEMS arrays applicationsen_US
dc.typeArticleen_US
dc.identifier.citationGassend, B., L.F. Velasquez-Garcia, and A.I. Akinwande. “Precision In-Plane Hand Assembly of Bulk-Microfabricated Components for High-Voltage MEMS Arrays Applications.” Microelectromechanical Systems, Journal of 18.2 (2009): 332-346. ©2009 Institute of Electrical and Electronics Engineers.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.approverAkinwande, Akintunde Ibitayo
dc.contributor.mitauthorAkinwande, Akintunde Ibitayo
dc.contributor.mitauthorVelasquez-Garcia, Luis Fernando
dc.relation.journalJournal of Microelectromechanical Systemsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsGassend, B.; Velasquez-Garcia, L.F.; Akinwande, A.I.en
dc.identifier.orcidhttps://orcid.org/0000-0003-3001-9223
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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