Radiation effects in MIT Lincoln Lab 3DIC technology
Author(s)Gouker, Pascale M.; Wyatt, Peter W.; Yost, Donna-Ruth W.; Chen, Chenson K.; Chen, Chang-Lee; Knecht, Jeffrey M.; Keast, Craig L.; ... Show more Show less
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We characterized TID effects in MITLL 3DIC technology. We found that the effects were comparable for nFETs on the bottom tier with that on single tier wafers. Less positive charge build-up is observed for wide nFETs on the upper tiers, and this is due to the absence of silicon below the BOX. Other results indicate that MITLL 3DIC technology can be hardened to ionizing radiation by modifying the BOX.
2009 IEEE International SOI Conference
Institute of Electrical and Electronics Engineers
Gouker, P.M. et al. “Radiation effects in MIT Lincoln lab 3DIC technology.” SOI Conference, 2009 IEEE International. 2009. 1-2. ©2009 Institute of Electrical and Electronics Engineers.
Final published version
INSPEC Accession Number: 10964643