Radiation effects in MIT Lincoln Lab 3DIC technology

Author(s)
Gouker, Pascale M.; Wyatt, Peter W.; Yost, Donna-Ruth W.; Chen, Chenson K.; Chen, Chang-Lee; ... Show more
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Abstract
We characterized TID effects in MITLL 3DIC technology. We found that the effects were comparable for nFETs on the bottom tier with that on single tier wafers. Less positive charge build-up is observed for wide nFETs on the upper tiers, and this is due to the absence of silicon below the BOX. Other results indicate that MITLL 3DIC technology can be hardened to ionizing radiation by modifying the BOX.
Date issued
2009-11
URI
http://hdl.handle.net/1721.1/59350
Department
Lincoln Laboratory
Journal
2009 IEEE International SOI Conference
Publisher
Institute of Electrical and Electronics Engineers
Citation
Gouker, P.M. et al. “Radiation effects in MIT Lincoln lab 3DIC technology.” SOI Conference, 2009 IEEE International. 2009. 1-2. ©2009 Institute of Electrical and Electronics Engineers.
Version: Final published version
Other identifiers
INSPEC Accession Number: 10964643
ISBN
978-1-4244-4256-0
ISSN
1078-621X
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