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Design and performance evaluation of a low-power data-line SRAM sense amplifier

Author(s)
Fu, Haitao; Yeo, Kiat-Seng; Do, Anh-Tuan; Kong, Zhi-Hui
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Abstract
The SRAM which functions as the cache for system-on-chip is vital in the electronic industry. The heavy bit-and data-line capacitances are the major road blocks to its performance. A high-performance SRAM is proposed using a 1.8 V/0.18 à ¿m CMOS standard process from Chartered Semiconductor Manufacturing Ltd (CHRT). It incorporates a discharging mechanism that helps eliminating the waiting time during the read operation, hence offering a faster sensing speed and lower power consumption. Our post-layout simulation results have shown that it improves the sensing speed and power consumption by 51.4%, and 62.47%, respectively when compared with the best published design. The total power-delay-product (PDP) is 81.79% better. Furthermore, it can operate at a supply voltage as low as 0.8 V with a high stability to the bit-line capacitances variation and mismatch.
Date issued
2010-02
URI
http://hdl.handle.net/1721.1/59362
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Proceedings of the 2009 12th International Symposium on Integrated Circuits, ISIC '09
Publisher
Institute of Electrical and Electronics Engineers
Citation
Fu, Haitao, Kiat-Seng Yeo, Anh-Tuan Do, and Zhi-Hui Kong (2010). "Design and performance evaluation of a low-power data-line SRAM sense amplifier." Proceedings of the 2009 12th International Symposium on Integrated Circuits, ISIC'09 (Piscataway, N.J.: IEEE): 291-294. © 2010 IEEE
Version: Final published version
Other identifiers
INSPEC Accession Number: 11105427
ISBN
978-9-8108-2468-6
Keywords
CMOS integrated circuits, SRAM chips, amplifiers, cache storage, logic design, low-power electronics, system-on-chip, CHRT, CMOS standard process, Chartered Semiconductor Manufacturing Ltd., bit-line capacitances variation, data-line capacitances, discharging mechanism, electronic industry, low-power data-line SRAM sense amplifier evaluation, lower power consumption, post-layout simulation, size 0.18 mum, total power-delay-product, voltage 1.8 V

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