Four-well highly strained quantum cascade lasers grown by metal-organic chemical vapor deposition
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We demonstrate a novel four-well injectorless design with short wavelength (5.5 mum) and room temperature operation utilizing highly strained Ga[subscript 0.35] In[subscript 0.6] As/Al[subscript 0.70] In[subscript 0.30]As (0.8/-1.5%) quantum wells.
Date issued
2009-08Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Research Laboratory of ElectronicsJournal
Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009.
Publisher
Institute of Electrical and Electronics Engineers
Citation
Hsu, A., Qing Hu, and B. Williams. “Four-well highly strained Quantum Cascade Lasers grown by metal-organic chemical vapor deposition.” Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. 1-2. ©2009 IEEE.
Version: Final published version
Other identifiers
INSPEC Accession Number: 10842864
ISBN
978-1-55752-869-8