Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors
Author(s)
Lin, Chung-Han; Merz, T. A.; Doutt, D. R.; Hetzer, M. J.; Joh, Jungwoo; del Alamo, Jesus A.; Mishra, U. K.; Brillson, L. J.; ... Show more Show less
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We used depth-resolved microcathodoluminescence spectroscopy (DRCLS) and Kelvin probe force microscopy (KPFM) to measure and map the temperature distribution and defect generation inside state-of-the-art AlGaN/GaN-based high electron mobility transistors (HEMTs) on a scale of tens of nanometers during device operation. DRCLS measurements of near band edge energies across the HEMT’s source-gate-drain regions reveal monotonic temperature increases across the submicron gate-drain channel, peaking under the drain side of the gate. DRCLS defect emissions mapped laterally and localized depthwise near the two-dimensional electron gas interface increase with device operation under the drain-side gate and correlate with higher KPFM surface potential maps.
Date issued
2009-07Department
Massachusetts Institute of Technology. Microsystems Technology LaboratoriesJournal
Applied Physics Letters
Publisher
American Institute of Physics
Citation
Lin, Chung-Han et al. “Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors.” Applied Physics Letters 95.3 (2009): 033510-3. © 2009 American Institute of Physics
Version: Final published version
ISSN
0003-6951
1077-3118