Earth abundant materials for high efficiency heterojunction thin film solar cells

Author(s)
Bertoni, Mariana I.; Ceder, Gerbrand; Lee, Yun Seog; Buonassisi, Anthony; Chan, Maria K
Thumbnail
DownloadLee-2009-Earth abundant materials for high efficiency heterojunction thin film solar cells.pdf (915.7Kb)
PUBLISHER_POLICY
Terms of use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Metadata
Show full item record
Abstract
We investigate earth abundant materials for thin-film solar cells that can meet tens of terawatts level deployment potential. Candidate materials are identified by combinatorial search, large-scale electronic structure calculations, and literature reviews. We identified cuprous oxide (Cu2O) as a prototype candidate for investigation as an absorber layer in thin film solar cells. Cu2O thin films are deposited by reactive DC magnetron sputtering and characterized. In order to tailor electrical properties, we modify grain structure, and add defects that enhance electron transport, maintaining desired optical gap.
Date issued
2009-06
URI
http://hdl.handle.net/1721.1/59535
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Department of Mechanical Engineering; Massachusetts Institute of Technology. Department of Physics; Massachusetts Institute of Technology. Laboratory for Manufacturing and Productivity
Journal
IEEE Photovoltaic Specialists Conference (PVSC)
Publisher
Institute of Electrical and Electronics Engineers
Citation
Yun Seog Lee et al. “Earth abundant materials for high efficiency heterojunction thin film solar cells.” Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE. 2009. 002375-002377. © 2009, IEEE
Version: Final published version
Other identifiers
INSPEC Accession Number: 11152193
ISSN
0160-8371
Collections