Fabrication and Characterization of Through-Substrate Interconnects
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We developed a through-substrate copper-damascene interconnect technology in silicon with minimal impedance. Via impedance was extracted using parameter measurements at 50 GHz that were matched to simple circuit models. The extracted impedance shows resistances ≤ 1 [Ohm], record-low inductance for aspect ratios > 4, and sidewall capacitance that approaches the theoretical value. For an aspect ratio of 10 (10 in diameter and 100 high), the through-substrate via has an average inductance of 36 pH at 10 GHz, resistance of 0.6 at 1 GHz, and sidewall capacitance of 0.3 pF.
Date issued
2010-05Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers
Citation
Wu, J.H., and J.A. del Alamo. “Fabrication and Characterization of Through-Substrate Interconnects.” Electron Devices, IEEE Transactions on 57.6 (2010): 1261-1268. © 2010 Institute of Electrical and Electronics Engineers.
Version: Final published version
Other identifiers
INSPEC Accession Number: 11340896
ISSN
0018-9383
Keywords
Ground inductance, Si RF technology, substrate crosstalk, substrate via, through-substrate via, through-wafer interconnect, through-wafer via, via inductance