Measurement results for an x-ray 3D-integrated active pixel sensor

Abstract

We have developed a hybrid Active Pixel Sensor for detecting low energy X-rays. The sensor consists of a silicon diode detector array built on a high resistivity wafer and an SOI CMOS readout circuit, connected together by means of unique 3D integration technology developed at MIT Lincoln Laboratory. In this paper we will describe measurements of sense node capacitance and device depletion depth along with corresponding simulations aimed to optimize device performance. We also describe race condition in the column decoder and identify ways to eliminate it in order to reduce fixed pattern noise.