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Development of SiGe arrays for visible-near IR imaging applications

Author(s)
Sood, Ashok K.; Richwine, Robert A.; Puri, Yash R.; DiLello, Nicole Ann; Hoyt, Judy L.; Dhar, Nibir; Balcerak, Raymond S.; Bramhall, Thomas G.; ... Show more Show less
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Abstract
SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take advantage of silicon based technology that promises small feature size, low dark current and compatibility with the low power silicon CMOS circuits for signal processing. This paper will discuss performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We will present results on the approach and device design for reducing the dark current in SiGe detector arrays. We will discuss electrical and optical properties of SiGe arrays at room temperature and as a function of temperature. We will also discuss future integration path for SiGe devices with other Silicon-based technology for defense and Commercial Applications.
Date issued
2010-08
URI
http://hdl.handle.net/1721.1/61326
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
Proceedings of SPIE--the International Society for Optical Engineering
Publisher
SPIE
Citation
Ashok K. Sood, Robert A. Richwine, Yash R. Puri, Nicole DiLello, Judy L. Hoyt, Nibir Dhar, Raymond S. Balcerak and Thomas G. Bramhall, "Development of SiGe arrays for visible-near IR applications", Proc. SPIE 7780, 77800F (2010) © 2010 COPYRIGHT SPIE
Version: Final published version
ISSN
0277-786X

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