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dc.contributor.authorLan, Yucheng
dc.contributor.authorWang, Hui
dc.contributor.authorWang, Dezhi
dc.contributor.authorChen, Gang
dc.contributor.authorRen, Zhifeng
dc.date.accessioned2011-03-03T17:57:58Z
dc.date.available2011-03-03T17:57:58Z
dc.date.issued2010-06
dc.date.submitted2010-05
dc.identifier.issn1687-9503
dc.identifier.urihttp://hdl.handle.net/1721.1/61384
dc.description.abstractNew TEM grids coated with ultrathin amorphous Al2O3 films have been developed using atomic layer deposition technique. The amorphous Al2O3 films can withstand temperatures over 600∘C in air and 900∘C in vacuum when the thickness of the Al2O3 film is 2 nm, and up to 1000∘C in air when the thickness is 25 nm, which makes heating TEM grids with nanoparticles up to 1000∘C in air and immediate TEM observation without interrupting the nanoparticles possible. Such coated TEM grids are very much desired for applications in high-temperature high-resolution transmission electron microscopy.en_US
dc.language.isoen_US
dc.publisherHindawi Pub. Corp.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1155/2010/279608en_US
dc.rightsCreative Commons Attributionen_US
dc.rights.urihttp://creativecommons.org/licenses/by/2.0/en_US
dc.sourceHindawien_US
dc.titleGrids for Applications in High-Temperature High-Resolution Transmission Electron Microscopyen_US
dc.typeArticleen_US
dc.identifier.citationLan, Yucheng, et al. “Grids for Applications in High-Temperature High-Resolution Transmission Electron Microscopy,” Journal of Nanotechnology, vol. 2010, Article ID 279608, 6 pages, 2010. © 2010 Hindawi Publishing Corporation.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.approverChen, Gang
dc.contributor.mitauthorChen, Gang
dc.relation.journalJournal of Nanotechnologyen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsLan, Yucheng; Wang, Hui; Wang, Dezhi; Chen, Gang; Ren, Zhifengen
dc.identifier.orcidhttps://orcid.org/0000-0002-3968-8530
mit.licensePUBLISHER_CCen_US
mit.metadata.statusComplete


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