Hybridization process for back-illuminated silicon Geiger-mode avalanche photodiode arrays
Author(s)Schuette, Daniel R.; Westhoff, Richard C.; Loomis, Andrew H.; Young, Douglas J.; Ciampi, Joseph S.; Aull, Brian F.; Reich, Robert K.; ... Show more Show less
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We present a unique hybridization process that permits high-performance back-illuminated silicon Geiger-mode avalanche photodiodes (GM-APDs) to be bonded to custom CMOS readout integrated circuits (ROICs) - a hybridization approach that enables independent optimization of the GM-APD arrays and the ROICs. The process includes oxide bonding of silicon GM-APD arrays to a transparent support substrate followed by indium bump bonding of this layer to a signal-processing ROIC. This hybrid detector approach can be used to fabricate imagers with high-fill-factor pixels and enhanced quantum efficiency in the near infrared as well as large-pixel-count, small-pixel-pitch arrays with pixel-level signal processing. In addition, the oxide bonding is compatible with high-temperature processing steps that can be used to lower dark current and improve optical response in the ultraviolet.
Proceedings of SPIE--the International Society for Optical Engineering; v. 7681
Schuette, Daniel R. et al. “Hybridization process for back-illuminated silicon Geiger-mode avalanche photodiode arrays.” Advanced Photon Counting Techniques IV. Ed. Mark A. Itzler & Joe C. Campbell. Orlando, Florida, USA: SPIE, 2010. 76810P-7. © 2010 COPYRIGHT SPIE
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