A Ge-on-Si laser for electronic-photonic integration

Author(s)
Sun, Xiaochen; Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen
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Abstract
We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects and communications.
Date issued
2009-08
URI
http://hdl.handle.net/1721.1/61670
Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Microphotonics Center
Journal
Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum Electronics and Laser Science Conference. CLEO/QELS 2009.
Publisher
Institute of Electrical and Electronics Engineers
Citation
Sun, Xiaochen, et al. “A Ge-on-Si laser for electronic-photonic integration.” Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on. 2009. 1-2. ©2009 IEEE.
Version: Final published version
Other identifiers
INSPEC Accession Number: 10843179
ISBN
978-1-55752-869-8
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