Dislocation mechanism of interface point defect migration
Author(s)
Kolluri, Kedarnath; Demkowicz, Michael J.
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Vacancies and interstitials absorbed at Cu-Nb interfaces are shown to migrate by a multistage process involving the thermally-activated formation, motion, and annihilation of kinks and jogs on interface misfit dislocations. This mechanism, including the energy along the entire migration path, can be described quantitatively within dislocation theory, suggesting that analysis of misfit dislocation networks may enable prediction of point defect behaviors at semicoherent heterointerfaces.
Date issued
2010-11Department
Massachusetts Institute of Technology. Department of Materials Science and EngineeringJournal
Physical Review B
Publisher
American Physical Society
Citation
Kolluri, Kedarnath, and Michael J. Demkowicz. “Dislocation Mechanism of Interface Point Defect Migration.” Physical Review B 82.19 (2010) : 193404. © 2010 The American Physical Society
Version: Final published version
ISSN
1098-0121
1550-235X