dc.contributor.author | Luican, A. | |
dc.contributor.author | Li, Guohong | |
dc.contributor.author | Reina, Alfonso | |
dc.contributor.author | Kong, Jing | |
dc.contributor.author | Nair, R. R. | |
dc.contributor.author | Novoselov, Kostya S. | |
dc.contributor.author | Geim, A. K. | |
dc.contributor.author | Andrei, E. Y. | |
dc.date.accessioned | 2011-08-26T14:19:39Z | |
dc.date.available | 2011-08-26T14:19:39Z | |
dc.date.issued | 2011-03 | |
dc.date.submitted | 2010-10 | |
dc.identifier.issn | 0031-9007 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/65391 | |
dc.description.abstract | We report high magnetic field scanning tunneling microscopy and Landau level spectroscopy of twisted graphene layers grown by chemical vapor deposition. For twist angles exceeding ∼3° the low energy carriers exhibit Landau level spectra characteristic of massless Dirac fermions. Above 20° the layers effectively decouple and the electronic properties are indistinguishable from those in single-layer graphene, while for smaller angles we observe a slowdown of the carrier velocity which is strongly angle dependent. At the smallest angles the spectra are dominated by twist-induced van Hove singularities and the Dirac fermions eventually become localized. An unexpected electron-hole asymmetry is observed which is substantially larger than the asymmetry in either single or untwisted bilayer graphene. | en_US |
dc.description.sponsorship | United States. Dept. of Energy (DE-FG02- 99ER45742) | en_US |
dc.description.sponsorship | National Science Foundation (U.S.) (DMR 0845358) | en_US |
dc.description.sponsorship | National Science Foundation (U.S.) (DMR-0906711) | en_US |
dc.description.sponsorship | United States. Office of Naval Research (MURI N00014-09-1-1063) | en_US |
dc.language.iso | en_US | |
dc.publisher | American Physical Society | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1103/PhysRevLett.106.126802 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | APS | en_US |
dc.title | Single-Layer Behavior and Its Breakdown in Twisted Graphene Layers | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Luican, A. et al. “Single-Layer Behavior and Its Breakdown in Twisted Graphene Layers.” Physical Review Letters 106.12 (2011) © 2011 American Physical Society | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | en_US |
dc.contributor.approver | Kong, Jing | |
dc.contributor.mitauthor | Reina, Alfonso | |
dc.contributor.mitauthor | Kong, Jing | |
dc.relation.journal | Physical Review Letters | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Luican, A.; Li, Guohong; Reina, A.; Kong, J.; Nair, R.; Novoselov, K.; Geim, A.; Andrei, E. | en |
dc.identifier.orcid | https://orcid.org/0000-0003-0551-1208 | |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |