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dc.contributor.authorLuican, A.
dc.contributor.authorLi, Guohong
dc.contributor.authorReina, Alfonso
dc.contributor.authorKong, Jing
dc.contributor.authorNair, R. R.
dc.contributor.authorNovoselov, Kostya S.
dc.contributor.authorGeim, A. K.
dc.contributor.authorAndrei, E. Y.
dc.date.accessioned2011-08-26T14:19:39Z
dc.date.available2011-08-26T14:19:39Z
dc.date.issued2011-03
dc.date.submitted2010-10
dc.identifier.issn0031-9007
dc.identifier.urihttp://hdl.handle.net/1721.1/65391
dc.description.abstractWe report high magnetic field scanning tunneling microscopy and Landau level spectroscopy of twisted graphene layers grown by chemical vapor deposition. For twist angles exceeding ∼3° the low energy carriers exhibit Landau level spectra characteristic of massless Dirac fermions. Above 20° the layers effectively decouple and the electronic properties are indistinguishable from those in single-layer graphene, while for smaller angles we observe a slowdown of the carrier velocity which is strongly angle dependent. At the smallest angles the spectra are dominated by twist-induced van Hove singularities and the Dirac fermions eventually become localized. An unexpected electron-hole asymmetry is observed which is substantially larger than the asymmetry in either single or untwisted bilayer graphene.en_US
dc.description.sponsorshipUnited States. Dept. of Energy (DE-FG02- 99ER45742)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (DMR 0845358)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (DMR-0906711)en_US
dc.description.sponsorshipUnited States. Office of Naval Research (MURI N00014-09-1-1063)en_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevLett.106.126802en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleSingle-Layer Behavior and Its Breakdown in Twisted Graphene Layersen_US
dc.typeArticleen_US
dc.identifier.citationLuican, A. et al. “Single-Layer Behavior and Its Breakdown in Twisted Graphene Layers.” Physical Review Letters 106.12 (2011) © 2011 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.approverKong, Jing
dc.contributor.mitauthorReina, Alfonso
dc.contributor.mitauthorKong, Jing
dc.relation.journalPhysical Review Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsLuican, A.; Li, Guohong; Reina, A.; Kong, J.; Nair, R.; Novoselov, K.; Geim, A.; Andrei, E.en
dc.identifier.orcidhttps://orcid.org/0000-0003-0551-1208
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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