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dc.contributor.authorPan, Z.-H.
dc.contributor.authorVescovo, E.
dc.contributor.authorFedorov, A. V.
dc.contributor.authorGardner, Dillon Richard
dc.contributor.authorLee, Young S.
dc.contributor.authorChu, Shaoyan
dc.contributor.authorGu, G. D.
dc.contributor.authorValla, T.
dc.date.accessioned2011-09-29T14:15:44Z
dc.date.available2011-09-29T14:15:44Z
dc.date.issued2011-06
dc.date.submitted2011-01
dc.identifier.issn0031-9007
dc.identifier.urihttp://hdl.handle.net/1721.1/66115
dc.description.abstractWe performed high-resolution spin- and angle-resolved photoemission spectroscopy studies of the electronic structure and the spin texture on the surface of Bi[subscript 2]Se[subscript 3], a model TI. By tuning the photon energy, we found that the topological surface state is well separated from the bulk states in the vicinity of kz=Z plane of the bulk Brillouin zone. The spin-resolved measurements in that region indicate a very high degree of spin polarization of the surface state, ∼0.75, much higher than previously reported. Our results demonstrate that the topological surface state on Bi[subscript 2]Se[subscript 3] is highly spin polarized and that the dominant factors limiting the polarization are mainly extrinsic.en_US
dc.description.sponsorshipUnited States. Dept. of Energy (Contract No. DE-AC02-98CH10886)en_US
dc.description.sponsorshipUnited States. Dept. of Energy (DOE Grant No. DE-FG02-04ER4613)en_US
dc.description.sponsorshipUnited States. Dept. of Energy (Contract No. DE-AC03- 76SF00098)en_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevLett.106.257004en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleElectronic Structure of the Topological Insulator Bi[subscript 2]Se[subscript 3] Using Angle-Resolved Photoemission Spectroscopy: Evidence for a Nearly Full Surface Spin Polarizationen_US
dc.title.alternativeElectronic Structure of the Topological Insulator Bi2Se3 Using Angle-Resolved Photoemission Spectroscopy: Evidence for a Nearly Full Surface Spin Polarizationen_US
dc.typeArticleen_US
dc.identifier.citationPan, Z.-H. et al. “Electronic Structure of the Topological Insulator Bi_{2}Se_{3} Using Angle-Resolved Photoemission Spectroscopy: Evidence for a Nearly Full Surface Spin Polarization.” Physical Review Letters 106 (2011). © 2011 American Physical Society.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.approverChu, Shaoyan
dc.contributor.mitauthorChu, Shaoyan
dc.contributor.mitauthorGardner, Dillon Richard
dc.contributor.mitauthorLee, Young S.
dc.relation.journalPhysical Review Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsPan, Z.-H.; Vescovo, E.; Fedorov, A.; Gardner, D.; Lee, Y.; Chu, S.; Gu, G.; Valla, T.en
dc.identifier.orcidhttps://orcid.org/0000-0003-2226-6443
dc.identifier.orcidhttps://orcid.org/0000-0002-7022-8313
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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