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dc.contributor.authorKim, Donghun
dc.contributor.authorBi, Lei
dc.contributor.authorJiang, Peng
dc.contributor.authorDionne, Gerald F.
dc.contributor.authorRoss, Caroline A.
dc.date.accessioned2011-11-17T18:42:49Z
dc.date.available2011-11-17T18:42:49Z
dc.date.issued2011-07
dc.date.submitted2011-05
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/67051
dc.description.abstractSrTi[subscript 1−x]M[subscript x]O[subscript 3] films in which M = Fe, Co, or Cr and x=0.04–0.5 have been grown epitaxially on CeO[subscript 2]-buffered Si, SrTiO[subscript 3], and LaAlO3 substrates. Films grown in vacuum containing Fe or Co typically showed a strong uniaxial magnetic anisotropy in the out-of-plane direction, a saturation moment on the order of 0.5μ[subscript B]/Fe or Co, and a magnetization that persists to temperatures of order 1000 K. In contrast, films containing Cr showed no evidence of a spontaneous magnetic moment. The films are typically in a high in-plane compressive strain state due to epitaxial growth. The results are discussed in terms of the magnetoelastic effects from specific ionic valence states, and the magnetization versus temperature curves are fitted to a model for magnetoelastic spin ordering.en_US
dc.description.sponsorshipNational Science Foundation (U.S.). Division of Materials Researchen_US
dc.description.sponsorshipSamsung Electronicsen_US
dc.description.sponsorshipIntel Corporationen_US
dc.description.sponsorshipChinese Scholarship Councilen_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.84.014416en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleMagnetoelastic effects in SrTi1−xMxO3 (M = Fe, Co, or Cr) epitaxial thin filmsen_US
dc.typeArticleen_US
dc.identifier.citationKim, Dong et al. “Magnetoelastic effects in SrTi_{1−x}M_{x}O_{3} (M = Fe, Co, or Cr) epitaxial thin films.” Physical Review B 84 (2011): n. pag. Web. 17 Nov. 2011. © 2011 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.approverRoss, Caroline A.
dc.contributor.mitauthorKim, Donghun
dc.contributor.mitauthorBi, Lei
dc.contributor.mitauthorJiang, Peng
dc.contributor.mitauthorDionne, Gerald F.
dc.contributor.mitauthorRoss, Caroline A.
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsKim, Dong; Bi, Lei; Jiang, Peng; Dionne, Gerald; Ross, C.en
dc.identifier.orcidhttps://orcid.org/0000-0003-2262-1249
dc.identifier.orcidhttps://orcid.org/0000-0002-6419-4129
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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