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dc.contributor.authorYoshihara, Fumiki
dc.contributor.authorNakamura, Yasunobu
dc.contributor.authorGustavsson, Simon
dc.contributor.authorBylander, Jonas
dc.contributor.authorYan, Fei
dc.contributor.authorOliver, William D.
dc.date.accessioned2011-11-17T19:23:38Z
dc.date.available2011-11-17T19:23:38Z
dc.date.issued2011-07
dc.date.submitted2011-07
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/67056
dc.description.abstractWe have measured flux-noise correlations in a tunable superconducting flux qubit. The device consists of two loops that independently control the qubit’s energy splitting and tunnel coupling. Low-frequency flux noise in the loops causes fluctuations of the qubit frequency and leads to dephasing. Since the noises in the two loops couple to different terms of the qubit Hamiltonian, a measurement of the dephasing rate at different bias points provides a way to extract both the amplitude and the sign of the noise correlations. We find that the flux fluctuations in the two loops are anticorrelated, consistent with a model where the flux noise is generated by randomly oriented unpaired spins on the metal surface.en_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.84.014525en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleNoise correlations in a flux qubit with tunable tunnel couplingen_US
dc.typeArticleen_US
dc.identifier.citationGustavsson, Simon et al. “Noise correlations in a flux qubit with tunable tunnel coupling.” Physical Review B 84 (2011): n. pag. Web. 17 Nov. 2011. © 2011 American Physical Societyen_US
dc.contributor.departmentLincoln Laboratoryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Nuclear Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.approverGustavsson, Simon
dc.contributor.mitauthorGustavsson, Simon
dc.contributor.mitauthorBylander, Jonas
dc.contributor.mitauthorYan, Fei
dc.contributor.mitauthorOliver, William D.
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsGustavsson, Simon; Bylander, Jonas; Yan, Fei; Oliver, William; Yoshihara, Fumiki; Nakamura, Yasunobuen
dc.identifier.orcidhttps://orcid.org/0000-0002-7069-1025
dc.identifier.orcidhttps://orcid.org/0000-0002-4674-2806
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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