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dc.contributor.authorKatsiev, Khabiboulakh
dc.contributor.authorYildiz, Bilge
dc.contributor.authorBalasubramaniam, Kavaipatti
dc.contributor.authorSalvador, Paul A.
dc.date.accessioned2011-11-30T21:32:02Z
dc.date.available2011-11-30T21:32:02Z
dc.date.issued2009-09
dc.date.submitted2009-06
dc.identifier.issn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1721.1/67334
dc.description.abstractWe report on the electron tunneling characteristics on La0.7Sr0.3MnO3 (LSM) thin-film surfaces up to 580 °C in 10[superscript −3] mbar oxygen pressure, using scanning tunneling microscopy/spectroscopy (STM/STS). A thresholdlike drop in the tunneling current was observed at positive bias in STS, which is interpreted as a unique indicator for the activation polarization in cation-oxygen bonding on LSM cathodes. Sr-enrichment was found on the surface at high temperature using Auger electron spectroscopy, and was accompanied by a decrease in tunneling conductance in STS. This suggests that Sr-terminated surfaces are less active for electron transfer in oxygen reduction compared to Mn-terminated surfaces on LSM.en_US
dc.description.sponsorshipUnited States. Dept. of Energy (Office of Fossil Energy Award No. DE–NT0004117)en_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3204022en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleElectron tunneling characteristics on La[subscript 0.7]Sr[subscript 0.3]MnO[subscript 3] thin-film surfaces at high temperatureen_US
dc.title.alternativeElectron tunneling characteristics on La0.7Sr0.3MnO3 thin-film surfaces at high temperatureen_US
dc.typeArticleen_US
dc.identifier.citationKatsiev, Khabiboulakh et al. “Electron tunneling characteristics on La[sub 0.7]Sr[sub 0.3]MnO[sub 3] thin-film surfaces at high temperature.” Applied Physics Letters 95 (2009): 092106. © 2009 American Institute of Physics.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Nuclear Science and Engineeringen_US
dc.contributor.approverYildiz, Bilge
dc.contributor.mitauthorYildiz, Bilge
dc.contributor.mitauthorKatsiev, Khabiboulakh
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsKatsiev, Khabiboulakh; Yildiz, Bilge; Balasubramaniam, Kavaipatti; Salvador, Paul A.en
dc.identifier.orcidhttps://orcid.org/0000-0002-2688-5666
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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