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dc.contributor.authorBita, Ion
dc.contributor.authorThomas, Edwin L.
dc.contributor.authorJia, Lin
dc.date.accessioned2012-01-27T18:42:07Z
dc.date.available2012-01-27T18:42:07Z
dc.date.issued2011-11
dc.date.submitted2011-08
dc.identifier.issn0031-9007
dc.identifier.issn1079-7114
dc.identifier.urihttp://hdl.handle.net/1721.1/68678
dc.description.abstractHere we demonstrate a novel quantitative procedure to pursue statistical studies on the geometric properties of photonic crystals and photonic quasicrystals (PQCs) which consist of separate dielectric particles. The geometric properties are quantified and correlated to the size of the photonic band gap (PBG) for wide permittivity range using three characteristic parameters: shape anisotropy, size distribution, and feature-feature distribution. Our concept brings statistical analysis to the photonic crystal research and offers the possibility to predict the PBG from a morphological analysis.en_US
dc.description.sponsorshipUnited States. Army Research Office. Institute for Soldier Nanotechnologies (contract W911NF-07-D-0004)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (grant DMR-0804449)en_US
dc.language.isoen_US
dc.publisherAmerican Physical Society (APS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevLett.107.193901en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleImpact of Geometry on the TM Photonic Band Gaps of Photonic Crystals and Quasicrystalsen_US
dc.typeArticleen_US
dc.identifier.citationJia, Lin, Ion Bita, and Edwin Thomas. “Impact of Geometry on the TM Photonic Band Gaps of Photonic Crystals and Quasicrystals.” Physical Review Letters 107.19 (2011): n. pag. Web. 27 Jan. 2012. © 2011 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Institute for Soldier Nanotechnologiesen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.approverThomas, Edwin L.
dc.contributor.mitauthorThomas, Edwin L.
dc.contributor.mitauthorJia, Lin
dc.relation.journalPhysical Review Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsJia, Lin; Bita, Ion; Thomas, Edwinen
dc.identifier.orcidhttps://orcid.org/0000-0001-5911-6524
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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