| dc.contributor.author | Demkowicz, Michael J. | |
| dc.contributor.author | Usov, I. | |
| dc.contributor.author | Bhattacharyya, D. | |
| dc.contributor.author | Wang, Y. Q. | |
| dc.contributor.author | Nastasi, M. | |
| dc.contributor.author | Misra, Amit | |
| dc.date.accessioned | 2012-02-07T20:54:31Z | |
| dc.date.available | 2012-02-07T20:54:31Z | |
| dc.date.issued | 2010-10 | |
| dc.date.submitted | 2010-08 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.issn | 1077-3118 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/69035 | |
| dc.description.abstract | Atomistic modeling shows that Cu–Nb and Cu–V interfaces contain high excess atomic volume due to constitutional vacancy concentrations of ∼ 5 at. % and ∼ 0.8 at. %., respectively. This finding is supported by experiments demonstrating that an approximately fivefold higher He concentration is required to observe He bubbles via through-focus transmission electron microscopy at Cu–Nb interfaces than in Cu–V interfaces. Interfaces with structures tailored to minimize precipitation and growth of He bubbles may be used to design damage-resistant composites for fusion reactors. | en_US |
| dc.description.sponsorship | United States. Dept. of Energy. Office of Basic Energy Sciences (award 2008LANL1026) | en_US |
| dc.language.iso | en_US | |
| dc.publisher | American Institute of Physics | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1063/1.3502594 | en_US |
| dc.rights | Creative Commons Attribution-Noncommercial-Share Alike 3.0 | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/3.0/ | en_US |
| dc.source | Prof. Demkowicz | en_US |
| dc.title | The effect of excess atomic volume on He bubble formation at fcc-bcc interfaces | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Demkowicz, M. J. et al. “The effect of excess atomic volume on He bubble formation at fcc–bcc interfaces.” Applied Physics Letters 97.16 (2010): 161903. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | en_US |
| dc.contributor.approver | Demkowicz, Michael J. | |
| dc.contributor.mitauthor | Demkowicz, Michael J. | |
| dc.relation.journal | Applied Physics Letters | en_US |
| dc.eprint.version | Author's final manuscript | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dspace.orderedauthors | Demkowicz, M. J.; Bhattacharyya, D.; Usov, I.; Wang, Y. Q.; Nastasi, M.; Misra, A. | en |
| dc.identifier.orcid | https://orcid.org/0000-0003-3949-0441 | |
| mit.license | OPEN_ACCESS_POLICY | en_US |
| mit.metadata.status | Complete | |
