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dc.contributor.authorSteinberg, Hadar
dc.contributor.authorLaloe, Jean-Baptiste
dc.contributor.authorFatemi, Valla
dc.contributor.authorMoodera, Jagadeesh
dc.contributor.authorJarillo-Herrero, Pablo
dc.date.accessioned2012-03-08T18:56:17Z
dc.date.available2012-03-08T18:56:17Z
dc.date.issued2011-12
dc.date.submitted2011-10
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/69602
dc.description.abstractWe study coherent electronic transport in charge-density-tunable microdevices patterned from thin films of the topological insulator (TI) Bi[subscript 2]Se[subscript 3]. The devices exhibit pronounced electric field effect, including ambipolar modulation of the resistance with an on-and-off ratio of 500%. We show that the weak antilocalization correction to conductance is sensitive to the number of coherently coupled channels, which in a TI includes the top and bottom surfaces and the bulk carriers. These are separated into coherently independent channels by the application of gate voltage and at elevated temperatures. Our results are consistent with a model where channel separation is determined by a competition between the phase coherence time and the surface-to-bulk scattering time.en_US
dc.description.sponsorshipIsrael. Ministry of Scienceen_US
dc.description.sponsorshipNational Science Foundation (U.S.). Division of Materials Research (Grant No. 0504158)en_US
dc.description.sponsorshipUnited States. Office of Naval Research (Grant No. N00014-09-1-0177)en_US
dc.description.sponsorshipDavid & Lucile Packard Foundation (Packard Fellowship)en_US
dc.language.isoen_US
dc.publisherAmerican Physical Society (APS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.84.233101en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleElectrically tunable surface-to-bulk coherent coupling in topological insulator thin filmsen_US
dc.typeArticleen_US
dc.identifier.citationSteinberg, H. et al. “Electrically Tunable Surface-to-bulk Coherent Coupling in Topological Insulator Thin Films.” Physical Review B 84.23 (2011): n. pag. Web. 8 Mar. 2012. © 2011 American Physical Societyen_US
dc.contributor.departmentMIT Materials Research Laboratoryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.departmentFrancis Bitter Magnet Laboratory (Massachusetts Institute of Technology)en_US
dc.contributor.approverJarillo-Herrero, Pablo
dc.contributor.mitauthorSteinberg, Hadar
dc.contributor.mitauthorLaloe, Jean-Baptiste
dc.contributor.mitauthorFatemi, Valla
dc.contributor.mitauthorMoodera, Jagadeesh
dc.contributor.mitauthorJarillo-Herrero, Pablo
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsSteinberg, H.; Laloë, J.-B.; Fatemi, V.; Moodera, J.; Jarillo-Herrero, P.en
dc.identifier.orcidhttps://orcid.org/0000-0002-2480-1211
dc.identifier.orcidhttps://orcid.org/0000-0003-3648-7706
dc.identifier.orcidhttps://orcid.org/0000-0001-8217-8213
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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