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dc.contributor.authorLos, J. H.
dc.contributor.authorBichara, Christophe
dc.contributor.authorPellenq, Roland J. -M.
dc.date.accessioned2012-03-08T19:57:18Z
dc.date.available2012-03-08T19:57:18Z
dc.date.issued2011-08
dc.date.submitted2011-05
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/69609
dc.description.abstractApplication of the fourth moment approximation (FMA) to the local density of states within a tight binding description to build a reactive, interatomic interaction potential for use in large scale molecular simulations, is a logical and significant step forward to improve the second moment approximation, standing at the basis of several, widely used (semi-)empirical interatomic interaction models. In this paper we present a sufficiently detailed description of the FMA and its technical implications, containing the essential elements for an efficient implementation in a simulation code. Using a recent, existing FMA-based model for C-Ni systems, we investigated the size dependence of the diffusion of a liquid Ni cluster on a graphene sheet and find a power law dependence of the diffusion constant on the cluster size (number of cluster atoms) with an exponent very close to −2/3, equal to a previously found exponent for the relatively fast diffusion of solid clusters on a substrate with incommensurate lattice matching. The cluster diffusion exponent gives rise to a specific contribution to the cluster growth law, which is due to cluster coalescence. This is confirmed by a simulation for Ni cluster growth on graphene, which shows that cluster coalescence dominates the initial stage of growth, overruling Oswald ripening.en_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.84.085455en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleTight binding within the fourth moment approximation: Efficient implementation and application to liquid Ni droplet diffusion on grapheneen_US
dc.typeArticleen_US
dc.identifier.citationLos, J., C. Bichara, and R. J. M. Pellenq. “Tight Binding Within the Fourth Moment Approximation: Efficient Implementation and Application to Liquid Ni Droplet Diffusion on Graphene.” Physical Review B 84.8 (2011): [12 pages]. ©2011 American Physical Society.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Civil and Environmental Engineeringen_US
dc.contributor.approverPellenq, Roland J. -M.
dc.contributor.mitauthorPellenq, Roland J. -M.
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsLos, J.; Bichara, C.; Pellenq, R. J. M.en
dc.identifier.orcidhttps://orcid.org/0000-0001-5559-4190
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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