dc.contributor.author | Los, J. H. | |
dc.contributor.author | Bichara, Christophe | |
dc.contributor.author | Pellenq, Roland J. -M. | |
dc.date.accessioned | 2012-03-08T19:57:18Z | |
dc.date.available | 2012-03-08T19:57:18Z | |
dc.date.issued | 2011-08 | |
dc.date.submitted | 2011-05 | |
dc.identifier.issn | 1098-0121 | |
dc.identifier.issn | 1550-235X | |
dc.identifier.uri | http://hdl.handle.net/1721.1/69609 | |
dc.description.abstract | Application of the fourth moment approximation (FMA) to the local density of states within a tight binding description to build a reactive, interatomic interaction potential for use in large scale molecular simulations, is a logical and significant step forward to improve the second moment approximation, standing at the basis of several, widely used (semi-)empirical interatomic interaction models. In this paper we present a sufficiently detailed description of the FMA and its technical implications, containing the essential elements for an efficient implementation in a simulation code. Using a recent, existing FMA-based model for C-Ni systems, we investigated the size dependence of the diffusion of a liquid Ni cluster on a graphene sheet and find a power law dependence of the diffusion constant on the cluster size (number of cluster atoms) with an exponent very close to −2/3, equal to a previously found exponent for the relatively fast diffusion of solid clusters on a substrate with incommensurate lattice matching. The cluster diffusion exponent gives rise to a specific contribution to the cluster growth law, which is due to cluster coalescence. This is confirmed by a simulation for Ni cluster growth on graphene, which shows that cluster coalescence dominates the initial stage of growth, overruling Oswald ripening. | en_US |
dc.language.iso | en_US | |
dc.publisher | American Physical Society | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1103/PhysRevB.84.085455 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | APS | en_US |
dc.title | Tight binding within the fourth moment approximation: Efficient implementation and application to liquid Ni droplet diffusion on graphene | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Los, J., C. Bichara, and R. J. M. Pellenq. “Tight Binding Within the Fourth Moment Approximation: Efficient Implementation and Application to Liquid Ni Droplet Diffusion on Graphene.” Physical Review B 84.8 (2011): [12 pages]. ©2011 American Physical Society. | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Civil and Environmental Engineering | en_US |
dc.contributor.approver | Pellenq, Roland J. -M. | |
dc.contributor.mitauthor | Pellenq, Roland J. -M. | |
dc.relation.journal | Physical Review B | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Los, J.; Bichara, C.; Pellenq, R. J. M. | en |
dc.identifier.orcid | https://orcid.org/0000-0001-5559-4190 | |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |