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dc.contributor.authorWang, Han
dc.contributor.authorHsu, Allen Long
dc.contributor.authorWu, Justin
dc.contributor.authorKong, Jing
dc.contributor.authorPalacios, Tomas
dc.date.accessioned2012-03-30T18:48:25Z
dc.date.available2012-03-30T18:48:25Z
dc.date.issued2010-08
dc.date.submitted2010-02
dc.identifier.issn0741-3106
dc.identifier.issn1558-0563
dc.identifier.otherINSPEC Accession Number: 11477411
dc.identifier.urihttp://hdl.handle.net/1721.1/69898
dc.description.abstractThe combination of the unique properties of graphene with new device concepts and nanotechnology can overcome some of the main limitations of traditional electronics in terms of maximum frequency, linearity, and power dissipation. In this letter, we demonstrate the use of the ambipolar-transport properties of graphene for the fabrication of a new kind of RF mixer device. Due to the symmetrical ambipolar conduction in graphene, graphene-based mixers can effectively suppress odd-order intermodulations and lead to lower spurious emissions in the circuit. The mixer operation was demonstrated at a frequency of 10 MHz using graphene grown by chemical vapor deposition on a Ni film and then transferred to an insulating substrate. The maximum operating frequency was limited by the device geometry and the measurement setup, and a high-quality factor was observed with a third-order intercept point of +13.8 dBm.en_US
dc.description.sponsorshipUnited States. Office of Naval Research. Multidisciplinary University Research Initiative (GATE-MURI Project)en_US
dc.description.sponsorshipMassachusetts Institute of Technology. Institute for Soldier Nanotechnologiesen_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/led.2010.2052017en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceIEEEen_US
dc.titleGraphene-Based Ambipolar RF Mixersen_US
dc.typeArticleen_US
dc.identifier.citationWang, Han et al. “Graphene-Based Ambipolar RF Mixers.” IEEE Electron Device Letters 31.9 (2010): 906–908. Web. 30 Mar. 2012. © 2010 Institute of Electrical and Electronics Engineersen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.contributor.approverPalacios, Tomas
dc.contributor.mitauthorWang, Han
dc.contributor.mitauthorHsu, Allen Long
dc.contributor.mitauthorWu, Justin
dc.contributor.mitauthorKong, Jing
dc.contributor.mitauthorPalacios, Tomas
dc.relation.journalIEEE Electron Device Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsWang, Han; Hsu, Allen; Wu, Justin; Kong, Jing; Palacios, Tomasen
dc.identifier.orcidhttps://orcid.org/0000-0003-0551-1208
dc.identifier.orcidhttps://orcid.org/0000-0002-2190-563X
mit.licensePUBLISHER_POLICYen_US


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