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dc.contributor.authorHsieh, David
dc.contributor.authorWray, L.
dc.contributor.authorQian, D.
dc.contributor.authorXia, Y.
dc.contributor.authorDil, J. H.
dc.contributor.authorMeier, F.
dc.contributor.authorPatthey, L.
dc.contributor.authorOsterwalder, J.
dc.contributor.authorBihlmayer, G.
dc.contributor.authorHor, Y. S.
dc.contributor.authorCava, R. J.
dc.contributor.authorHasan, M. Z.
dc.date.accessioned2012-05-14T19:29:36Z
dc.date.available2012-05-14T19:29:36Z
dc.date.issued2010-12
dc.date.submitted2010-01
dc.identifier.issn1367-2630
dc.identifier.urihttp://hdl.handle.net/1721.1/70601
dc.description.abstractWe report high-resolution spin-resolved photoemission spectroscopy (spin-ARPES) measurements on the parent compound Sb of the recently discovered three-dimensional topological insulator Bi1−xSbx (Hsieh et al 2008 Nature 452 970, Hsieh et al 2009 Science 323 919). By modulating the incident photon energy, we are able to map both the bulk and the (111) surface band structure, from which we directly demonstrate that the surface bands are spin polarized by the spin–orbit interaction and connect the bulk valence and conduction bands in a topologically non-trivial way. A unique asymmetric Dirac surface state gives rise to a k-splitting of its spin-polarized electronic channels. These results complement our previously published works on this class of materials and re-confirm our discovery of topological insulator states in the Bi₁₋ₓSbₓ series.en_US
dc.language.isoen_US
dc.publisherInstitute of Physics Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/1367-2630/12/12/125001en_US
dc.rightsCreative Commons Attribution 3.0en_US
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en_US
dc.sourceNew Journal of Physicsen_US
dc.titleDirect observation of spin-polarized surface states in the parent compound of a topological insulator using spin- and angle-resolved photoemission spectroscopy in a Mott-polarimetry modeen_US
dc.typeArticleen_US
dc.identifier.citationHsieh, D et al. “Direct Observation of Spin-polarized Surface States in the Parent Compound of a Topological Insulator Using Spin- and Angle-resolved Photoemission Spectroscopy in a Mott-polarimetry Mode.” New Journal of Physics 12.12 (2010): 125001. Web.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.approverHsieh, David
dc.contributor.mitauthorHsieh, David
dc.relation.journalNew Journal of Physicsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsHsieh, D; Wray, L; Qian, D; Xia, Y; Dil, J H; Meier, F; Patthey, L; Osterwalder, J; Bihlmayer, G; Hor, Y S; Cava, R J; Hasan, M Zen
dc.identifier.orcidhttps://orcid.org/0000-0002-0042-9195
mit.licensePUBLISHER_CCen_US
mit.metadata.statusComplete


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