RF performance of short channel graphene field-effect transistor
Author(s)
Wu, Y. Q.; Lin, Y. -M.; Jenkins, K. A.; Ott, J. A.; Dimitrakopoulos, C.; Farmer, Damon B.; Xia, F.; Grill, A.; Antoniadis, Dimitri A.; Avouris, Phaedon; Antoniadis, Dimitri A.; ... Show more Show less
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In this paper, the authors present experimental studies on transport characteristics of graphene FETs with channel lengths down to 70 nm. The factors limiting the performance of short channel graphene devices are discussed. RF performance of a sub-100 nm graphene transistor fabricated on epitaxial graphene grown on a SiC substrate is also presented. A cut-off frequency as high as 170 GHz is achieved in a 90 nm graphene FET using a scalable top-down fabrication processes. Our results indicate that further improvement of RF performance of graphene FETs can be enabled by channel length scaling with structure optimization and contact resistance reduction.
Date issued
2010-12Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
2010 IEEE International Electron Devices Meeting (IEDM)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Wu, Y.Q. et al. “RF Performance of Short Channel Graphene Field-effect Transistor.” IEEE, 2010. 9.6.1–9.6.3. Web. 1 June 2012.
Version: Final published version
Other identifiers
INSPEC Accession Number: 11777224
ISBN
978-1-4244-7419-6
978-1-4424-7418-5
ISSN
0163-1918