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dc.contributor.authorRamadass, Yogesh Kumar
dc.contributor.authorFayed, Ayman A.
dc.contributor.authorChandrakasan, Anantha P.
dc.date.accessioned2012-06-14T18:15:32Z
dc.date.available2012-06-14T18:15:32Z
dc.date.issued2010-12
dc.date.submitted2010-07
dc.identifier.issn0018-9200
dc.identifier.issn1558-173X
dc.identifier.otherINSPEC Accession Number: 11684808
dc.identifier.urihttp://hdl.handle.net/1721.1/71150
dc.description.abstractImplementing efficient and cost-effective power regulation schemes for battery-powered mixed-signal SoCs is a key focus in integrated circuit design. This paper presents a fully-integrated switched-capacitor DC-DC converter in 45 nm digital CMOS technology. The proposed implementation uses digital capacitance modulation instead of traditional PFM and PWM control methods to maintain regulation against load current changes. This technique preserves constant frequency switching while also scaling switching and bottom-plate losses with changes in load current. Therefore, high efficiency can be achieved across different load current levels while maintaining a predictable switching noise behavior. The converter occupies only 0.16 mm2, and operates from 1.8 V input. It delivers a programmable sub-1 V power supply with efficiency as high as 69% and load current between 100 μA and 8 mA. Measurement results confirm the theoretical basis of the proposed design.en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/jssc.2010.2076550en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceIEEEen_US
dc.titleA Fully-Integrated Switched-Capacitor Step-Down DC-DC Converter With Digital Capacitance Modulation in 45 nm CMOSen_US
dc.typeArticleen_US
dc.identifier.citationRamadass, Yogesh K., Ayman A. Fayed, and Anantha P. Chandrakasan. “A Fully-Integrated Switched-Capacitor Step-Down DC-DC Converter With Digital Capacitance Modulation in 45 Nm CMOS.” IEEE Journal of Solid-State Circuits 45.12 (2010): 2557–2565. Web. © 2010 IEEE.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.contributor.approverChandrakasan, Anantha P.
dc.contributor.mitauthorChandrakasan, Anantha P.
dc.contributor.mitauthorRamadass, Yogesh Kumar
dc.relation.journalIEEE Journal of Solid-State Circuitsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsRamadass, Yogesh K.; Fayed, Ayman A.; Chandrakasan, Anantha P.en
dc.identifier.orcidhttps://orcid.org/0000-0002-5977-2748
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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