Study on Stiffness and Conditioning Effects of CMP Pad Based on Physical Die-Level CMP Model
Name
Boning-Study on stiffness.pdf
Size
1.08 MB
Format
Adobe PDF
Checksum (MD5)
30cda8282f49a948199e473c096094b6
Author(s)
Boning, Duane S.
Fan, Wei
Charns, Leslie
Miyauchi, Hiroyuki
Tano, Hiroyuki
Tsuji, Shoei
Date Issued
April 2010
Journal
Journal of the Electrochemical Society
Publisher
Electrochemical Society
Citation
Fan, Wei et al. “Study on Stiffness and Conditioning Effects of CMP Pad Based on Physical Die-Level CMP Model.” Journal of The Electrochemical Society 157.5 (2010): H526. ©2010 The Electrochemical Society
Version
Final published version
Abstract
Chemical mechanical planarization (CMP) pad stiffness and conditioning effects were evaluated based on a physical die-level CMP model, with pad effective modulus and asperity height as parameters. In one study, patterned dielectric wafers were polished using polymeric pads of different stiffnesses. In a second study, wafers were polished by standard pads using different conditioning disks. Polishing experimental data (dielectric thickness and step height) were fitted by the physical model, enabling the extraction of the pad effective modulus and asperity height model parameters. A higher pad stiffness gives better within-die uniformity, and the conditioning disk with blocky diamonds achieves up-area only polishing for longer times. Polishing simulations using the physical model reflect a clear pattern density dependence.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1149/1.3369963
