Impact of 110 uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors

Author(s)
Xia, Ling; del Alamo, Jesus A.
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Abstract
This letter reports on a study of the impact of 〈110〉 uniaxial strain on the characteristics of InGaAs high electron mobility transistors (HEMT) by bending GaAs chips up to a strain level of 0.4%. Systematic changes in the threshold voltage and intrinsic transconductance were observed. These changes can be well predicted by Schrödinger–Poisson simulations of the one-dimensional electrostatics of the device that include the piezoelectric effect, Schottky barrier height change, and sub-band quantization change due to strain. The effect of 〈110〉 strain on the device electrostatics emerges as a dominant effect over that of transport in the studied InGaAs HEMTs.
Description
Erratum: “Impact of <110> uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors” [Appl. Phys. Lett. 95, 243504 (2009)] Ling Xia et al. Appl. Phys. Lett. 97, 029901 (2010)
Date issued
2009-12
URI
http://hdl.handle.net/1721.1/71574
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Xia, Ling, and Jesús A. del Alamo. “Impact of ⟨110⟩ uniaxial strain on n-channel In[sub 0.15]Ga[sub 0.85]As high electron mobility transistors.” Applied Physics Letters 95.24 (2009): 243504.
Version: Author's final manuscript
ISSN
0003-6951
1077-3118
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