dc.contributor.author | Teherani, James T. | |
dc.contributor.author | Chern, Winston | |
dc.contributor.author | Antoniadis, Dimitri A. | |
dc.contributor.author | Hoyt, Judy L. | |
dc.contributor.author | Ruiz, Liliana | |
dc.contributor.author | Poweleit, Christian D. | |
dc.contributor.author | Menendez, Jose | |
dc.date.accessioned | 2012-07-12T18:18:56Z | |
dc.date.available | 2012-07-12T18:18:56Z | |
dc.date.issued | 2012-05 | |
dc.date.submitted | 2012-02 | |
dc.identifier.issn | 1098-0121 | |
dc.identifier.issn | 1550-235X | |
dc.identifier.uri | http://hdl.handle.net/1721.1/71597 | |
dc.description.abstract | Metal-oxide-semiconductor capacitors were fabricated on type-II staggered gap strained-Si/strained-Ge heterostructures epitaxially grown on relaxed SiGe substrates of various Ge fractions. Quasistatic quantum-mechanical capacitance-voltage (CV) simulations were fit to experimental CV measurements to extract the band alignment of the strained layers. The valence-band offset of the strained-Si/strained-Ge heterostructure was found to be 770, 760, and 670 meV for 35, 42, and 52% Ge in the relaxed SiGe substrate, respectively. These values are approximately 100 meV larger than the usually recommended band offsets for modeling Si/Ge structures. It is shown that the larger valence-band offsets found here are consistent with an 800-meV average valence-band offset between Si and Ge, which also explains the type-II band alignment observed in strained-Si[subscript 1−x]Ge[subscript x] on unstrained-Si heterostructures. | en_US |
dc.description.sponsorship | United States. Defense Advanced Research Projects Agency (Contract No. FA8650-08-C-7835) | en_US |
dc.description.sponsorship | National Science Foundation (U.S.) (Contract No. ECCS-0939514) | en_US |
dc.description.sponsorship | National Defense Science and Engineering Graduate Fellowship | en_US |
dc.language.iso | en_US | |
dc.publisher | American Physical Society | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1103/PhysRevB.85.205308 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | APS | en_US |
dc.title | Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Teherani, James et al. “Extraction of Large Valence-band Energy Offsets and Comparison to Theoretical Values for strained-Si/strained-Ge type-II Heterostructures on Relaxed SiGe Substrates.” Physical Review B 85.20 (2012). ©2012 American Physical Society | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
dc.contributor.approver | Antoniadis, Dimitri A. | |
dc.contributor.mitauthor | Teherani, James T. | |
dc.contributor.mitauthor | Chern, Winston | |
dc.contributor.mitauthor | Antoniadis, Dimitri A. | |
dc.contributor.mitauthor | Hoyt, Judy L. | |
dc.relation.journal | Physical Review B | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Teherani, James; Chern, Winston; Antoniadis, Dimitri; Hoyt, Judy; Ruiz, Liliana; Poweleit, Christian; Menéndez, José | en |
dc.identifier.orcid | https://orcid.org/0000-0002-7778-8073 | |
dc.identifier.orcid | https://orcid.org/0000-0002-5452-8009 | |
dc.identifier.orcid | https://orcid.org/0000-0002-4836-6525 | |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |