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Measurement of an Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi[subscript 2]Se[subscript 3] Using Angle-Resolved Photoemission Spectroscopy

Author(s)
Pan, Z. -H.; Fedorov, A. V.; Gardner, Dillon Richard; Lee, Young S.; Chu, S.; Valla, T.; ... Show more Show less
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Abstract
Gapless surface states on topological insulators are protected from elastic scattering on nonmagnetic impurities which makes them promising candidates for low-power electronic applications. However, for widespread applications, these states should have to remain coherent at ambient temperatures. Here, we studied temperature dependence of the electronic structure and the scattering rates on the surface of a model topological insulator, Bi[subscript 2]Se[aubscript 3], by high-resolution angle-resolved photoemission spectroscopy. We found an extremely weak broadening of the topological surface state with temperature and no anomalies in the state’s dispersion, indicating exceptionally weak electron-phonon coupling. Our results demonstrate that the topological surface state is protected not only from elastic scattering on impurities, but also from scattering on low-energy phonons, suggesting that topological insulators could serve as a basis for room-temperature electronic devices.
Date issued
2012-05
URI
http://hdl.handle.net/1721.1/71615
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Department of Physics
Journal
Physical Review Letters
Publisher
American Physical Society
Citation
Pan, Z.-H. et al. “Measurement of an Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi[subscript 2]Se[subscript 3] Using Angle-Resolved Photoemission Spectroscopy.” Physical Review Letters 108.18 (2012). © 2012 American Physical Society
Version: Final published version
ISSN
0031-9007
1079-7114

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