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dc.contributor.authorTeherani, James T.
dc.contributor.authorChern, Winston
dc.contributor.authorAntoniadis, Dimitri A.
dc.contributor.authorHoyt, Judy L.
dc.contributor.authorRuiz, Liliana
dc.contributor.authorPoweleit, Christian D.
dc.contributor.authorMenendez, Jose
dc.date.accessioned2012-07-18T15:57:55Z
dc.date.available2012-07-18T15:57:55Z
dc.date.issued2012-05
dc.date.submitted2011-02
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/71684
dc.description.abstractMetal-oxide-semiconductor capacitors were fabricated on type-II staggered gap strained-Si/strained-Ge heterostructures epitaxially grown on relaxed SiGe substrates of various Ge fractions. Quasistatic quantum-mechanical capacitance-voltage (CV) simulations were fit to experimental CV measurements to extract the band alignment of the strained layers. The valence-band offset of the strained-Si/strained-Ge heterostructure was found to be 770, 760, and 670 meV for 35, 42, and 52% Ge in the relaxed SiGe substrate, respectively. These values are approximately 100 meV larger than the usually recommended band offsets for modeling Si/Ge structures. It is shown that the larger valence-band offsets found here are consistent with an 800-meV average valence-band offset between Si and Ge, which also explains the type-II band alignment observed in strained-Si[subscript 1−x]Ge[subscript x] on unstrained-Si heterostructures.en_US
dc.description.sponsorshipUnited States. Defense Advanced Research Projects Agency (Contract No. FA8650-08-C-7835)en_US
dc.description.sponsorshipNational Science Foundation (U.S.). Center for Energy Efficient Electronics Science (Contract No. ECCS-0939514)en_US
dc.description.sponsorshipNational Defense Science and Engineering Graduate Fellowship (NSF) (Grant No. DMR-0907600)en_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.85.205308en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleExtraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substratesen_US
dc.typeArticleen_US
dc.identifier.citationTeherani, James et al. “Extraction of Large Valence-band Energy Offsets and Comparison to Theoretical Values for strained-Si/strained-Ge type-II Heterostructures on Relaxed SiGe Substrates.” Physical Review B 85.20 (2012). ©2012 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.approverHoyt, Judy L.
dc.contributor.mitauthorTeherani, James T.
dc.contributor.mitauthorChern, Winston
dc.contributor.mitauthorAntoniadis, Dimitri A.
dc.contributor.mitauthorHoyt, Judy L.
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsTeherani, James; Chern, Winston; Antoniadis, Dimitri; Hoyt, Judy; Ruiz, Liliana; Poweleit, Christian; Menéndez, Joséen
dc.identifier.orcidhttps://orcid.org/0000-0002-7778-8073
dc.identifier.orcidhttps://orcid.org/0000-0002-5452-8009
dc.identifier.orcidhttps://orcid.org/0000-0002-4836-6525
mit.licensePUBLISHER_POLICYen_US


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