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dc.contributor.authorBravo-Abad, Jorge
dc.contributor.authorIppen, Erich P.
dc.contributor.authorSoljacic, Marin
dc.date.accessioned2012-08-01T19:00:15Z
dc.date.available2012-08-01T19:00:15Z
dc.date.issued2009-06
dc.date.submitted2009-03
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.urihttp://hdl.handle.net/1721.1/71940
dc.description.abstractIn this letter we theoretically demonstrate that by dramatically enhancing two-photon absorption, all-silicon optical microresonators can act as efficient photodetectors for light at telecom wavelengths. We illustrate this approach with two specific designs based on a ring resonator and a photonic crystal cavity. The proposed scheme is fully compatible with standard silicon complementary metal-oxide-semiconductor processing technology, and thus, could contribute to the development of chip-scale integrated photodetectors based exclusively on silicon.en_US
dc.description.sponsorshipNational Science Foundation (U.S.). Materials Research Science and Engineering Centers (Program) (Award Number DMR-0819762)en_US
dc.description.sponsorshipUnited States. Air Force Office of Scientific Research (Grant Number FA9550-07-1-0014)en_US
dc.description.sponsorshipUnited States. Army Research Office. Institute for Soldier Nanotechnologies (Contract Number W911NF-07-D-0004)en_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3155135en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleUltrafast photodetection in an all-silicon chip enabled by two-photon absorptionen_US
dc.typeArticleen_US
dc.identifier.citationBravo-Abad, J., E. P. Ippen, and M. Soljačić. “Ultrafast Photodetection in an All-silicon Chip Enabled by Two-photon Absorption.” Applied Physics Letters 94.24 (2009): 241103. © 2009 American Institute of Physicsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.approverIppen, Erich P.
dc.contributor.mitauthorBravo-Abad, Jorge
dc.contributor.mitauthorIppen, Erich P.
dc.contributor.mitauthorSoljacic, Marin
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsBravo-Abad, J.; Ippen, E. P.; Soljačić, M.en
dc.identifier.orcidhttps://orcid.org/0000-0002-7184-5831
dc.identifier.orcidhttps://orcid.org/0000-0002-6032-8636
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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