Hole mobility enhancement in In0.41 Ga0.59 Sb quantum-well field-effect transistors
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The impact of 〈110〉 uniaxial strain on the characteristics of p-channel In[subscript 0.41]Ga[subscript 0.59]Sb quantum-well field-effect transistors (QW-FETs) is studied through chip-bending experiments. Uniaxial strain is found to affect the linear-regime drain current and the threshold voltage of the FET through the modulation of the hole mobility of the two-dimensional hole gas (2DHG) in the QW-FET. The piezoresistance coefficients of the 2DHG have been determined to be π[superscript ∥][subscript 〈110〉] = 1.17×10[superscript −10] cm[superscript 2]/dyn and π[superscript ⊥][subscript 〈110〉] = −1.9×10[superscript −11] cm[superscript 2]/dyn. The value of π[superscript ∥][subscript 〈110〉] is 1.5 times that of holes in Si metal-oxide-semiconductor (MOS) field-effect transistors and establishes InGaSb as a promising material system for a future III-V complementary MOS (CMOS) technology.
Date issued
2011-02Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology LaboratoriesJournal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Xia, Ling et al. “Hole Mobility Enhancement in In[sub 0.41]Ga[sub 0.59]Sb Quantum-well Field-effect Transistors.” Applied Physics Letters 98.5 (2011): 053505. © 2011 American Institute of Physics
Version: Final published version
ISSN
0003-6951
1077-3118