High Breakdown ( > \hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
Author(s)
Lu, Bin; Palacios, Tomas
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Alternative title
High Breakdown ( > 1500 V ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
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In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulating carrier wafer (e.g., glass or polycrystalline AlN). By applying this new technology to standard AlGaN/GaN HEMTs grown on Si substrate, an AlGaN/GaN HEMT with breakdown voltage above 1500 V and specific on resistance of 5.3 mΩ·cm[superscript 2] has been achieved.
Date issued
2010-07Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Lu, Bin, and Tomás Palacios. “High Breakdown ( > 1500 V ) AlGaN/GaN HEMTs by Substrate-Transfer Technology.” IEEE Electron Device Letters 31.9 (2010): 951–953. © Copyright 2010 IEEE
Version: Final published version
ISSN
0741-3106