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dc.contributor.authorBernardi, Marco
dc.contributor.authorPalummo, Maurizia
dc.contributor.authorGrossman, Jeffrey C.
dc.date.accessioned2012-08-28T18:10:18Z
dc.date.available2012-08-28T18:10:18Z
dc.date.issued2012-06
dc.date.submitted2012-02
dc.identifier.issn0031-9007
dc.identifier.issn1079-7114
dc.identifier.urihttp://hdl.handle.net/1721.1/72379
dc.description.abstractWe explain the nature of the electronic energy gap and optical absorption spectrum of carbon–boron-nitride (CBN) monolayers using density functional theory, GW and Bethe-Salpeter calculations. The band structure and the optical absorption are regulated by the C domain size rather than the composition (as customary for bulk semiconductor alloys). The C and BN quasiparticle states lie at separate energy for C and BN, with little mixing for energies near the band edge where states are chiefly C in character. The resulting optical absorption spectra show two distinct peaks whose energy and relative intensity vary with composition in agreement with the experiment. The monolayers present strongly bound excitons localized within the C domains, with binding energies of the order of 0.5–1.5 eV dependent on the C domain size. The optoelectronic properties result from the overall monolayer band structure, and cannot be understood as a superposition of the properties of bulklike C and BN domains.en_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevLett.108.226805en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleOptoelectronic Properties in Monolayers of Hybridized Graphene and Hexagonal Boron Nitrideen_US
dc.typeArticleen_US
dc.identifier.citationBernardi, Marco, Maurizia Palummo, and Jeffrey Grossman. “Optoelectronic Properties in Monolayers of Hybridized Graphene and Hexagonal Boron Nitride.” Physical Review Letters 108.22 (2012). © 2012 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.approverGrossman, Jeffrey C.
dc.contributor.mitauthorBernardi, Marco
dc.contributor.mitauthorGrossman, Jeffrey C.
dc.relation.journalPhysical Review Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsBernardi, Marco; Palummo, Maurizia; Grossman, Jeffreyen
dc.identifier.orcidhttps://orcid.org/0000-0003-1281-2359
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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