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Mechanism for recombination of radiation-induced point defects at interphase boundaries

Author(s)
Demkowicz, Michael J.; Germann, T. C.; Liu, X.-Y.; Misra, Amit; Nastasi, M.; Uberuaga, B. P.; ... Show more Show less
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.

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Abstract
Interfaces play a critical role in the extraordinary resistance to irradiation damage in nanostructured materials. Atomistic simulations are performed to examine defect production and recovery at incoherent interphase boundaries with different atomic structures. The interstitials produced during cascades and absorbed by the interface are subsequently observed to emit from the interface to annihilate residual vacancies in the nearby bulk. These results indicate that interstitials do not “lose their identity” when absorbed at interfaces regardless of the extent of delocalization at boundaries.
Date issued
2012-01
URI
http://hdl.handle.net/1721.1/72459
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Physical Review B
Publisher
American Physical Society
Citation
Liu, X.-Y. et al. “Mechanism for Recombination of Radiation-induced Point Defects at Interphase Boundaries.” Physical Review B 85.1 (2012): 012103. © 2012 American Physical Society.
Version: Final published version
ISSN
1098-0121
1550-235X

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