Competition between cotunneling, Kondo effect, and direct tunneling in discontinuous high-anisotropy magnetic tunnel junctions
Author(s)
Ciudad, David; Arena, D. A.; Han, X.-F.; Hindmarch, A. T.; Marrows, C. H.; Negusse, E.; Wen, Z.-C.; ... Show more Show less
DownloadCiudad-2012-Competition between cotunneling, Kondo effect, and direct tunneling.pdf (710.4Kb)
PUBLISHER_POLICY
Publisher Policy
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Terms of use
Metadata
Show full item recordAbstract
The transition between Kondo and Coulomb blockade effects in discontinuous double magnetic tunnel junctions is explored as a function of the size of the CoPt magnetic clusters embedded between AlO[subscript x] tunnel barriers. A gradual competition between cotunneling enhancement of the tunneling magnetoresistance (TMR) and the TMR suppression due to the Kondo effect has been found in these junctions, with both effects having been found to coexist even in the same sample. It is possible to tune between these two states with temperature (at a temperature far below the cluster blocking temperature). In addition, when further decreasing the size of the CoPt clusters, another gradual transition between the Kondo effect and direct tunneling between the electrodes takes place. This second transition shows that the spin-flip processes found in junctions with impurities in the barrier are in fact due to the Kondo effect. A simple theoretical model able to account for these experimental results is proposed.
Date issued
2012-06Department
Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology)Journal
Physical Review B
Publisher
American Physical Society
Citation
Ciudad, D. et al. “Competition Between Cotunneling, Kondo Effect, and Direct Tunneling in Discontinuous High-anisotropy Magnetic Tunnel Junctions.” Physical Review B 85.21 (2012): 214408. © 2012 American Physical Society.
Version: Final published version
ISSN
1098-0121
1550-235X