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dc.contributor.authorYeng, YiXiang
dc.contributor.authorGhebrebrhan, Michael
dc.contributor.authorBermel, Peter A.
dc.contributor.authorSoljacic, Marin
dc.contributor.authorChan, Walker R
dc.contributor.authorJoannopoulos, John
dc.contributor.authorCelanovic, Ivan L.
dc.date.accessioned2012-09-04T18:16:51Z
dc.date.available2012-09-04T18:16:51Z
dc.date.issued2012-02
dc.date.submitted2011-10
dc.identifier.issn0027-8424
dc.identifier.issn1091-6490
dc.identifier.urihttp://hdl.handle.net/1721.1/72504
dc.description.abstractThe nascent field of high-temperature nanophotonics could potentially enable many important solid-state energy conversion applications, such as thermophotovoltaic energy generation, selective solar absorption, and selective emission of light. However, special challenges arise when trying to design nanophotonic materials with precisely tailored optical properties that can operate at high-temperatures (> 1,100 K). These include proper material selection and purity to prevent melting, evaporation, or chemical reactions; severe minimization of any material interfaces to prevent thermomechanical problems such as delamination; robust performance in the presence of surface diffusion; and long-range geometric precision over large areas with severe minimization of very small feature sizes to maintain structural stability. Here we report an approach for high-temperature nanophotonics that surmounts all of these difficulties. It consists of an analytical and computationally guided design involving high-purity tungsten in a precisely fabricated photonic crystal slab geometry (specifically chosen to eliminate interfaces arising from layer-by-layer fabrication) optimized for high performance and robustness in the presence of roughness, fabrication errors, and surface diffusion. It offers near-ultimate short-wavelength emittance and low, ultra-broadband long-wavelength emittance, along with a sharp cutoff offering 4∶1 emittance contrast over 10% wavelength separation. This is achieved via Q-matching, whereby the absorptive and radiative rates of the photonic crystal’s cavity resonances are matched. Strong angular emission selectivity is also observed, with short-wavelength emission suppressed by 50% at 75° compared to normal incidence. Finally, a precise high-temperature measurement technique is developed to confirm that emission at 1,225 K can be primarily confined to wavelengths shorter than the cutoff wavelength.en_US
dc.description.sponsorshipTeraGrid (Grant Number TG-MCA94P014)en_US
dc.description.sponsorshipSolid-State Solar-Thermal Energy Conversion Center (Grant number DE-SC0001299)en_US
dc.description.sponsorshipUnited States. Army Research Office. Institute for Soldier Nanotechnologies (Contract DAAD-19-02- D0002)en_US
dc.description.sponsorshipUnited States. Army Research Office. Institute for Soldier Nanotechnologies (Contract W911NF-07-D0004)en_US
dc.language.isoen_US
dc.publisherNational Academy of Sciencesen_US
dc.relation.isversionofhttp://dx.doi.org/10.1073/pnas.1120149109en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourcePNASen_US
dc.titleEnabling high-temperature nanophotonics for energy applicationsen_US
dc.typeArticleen_US
dc.identifier.citationYeng, Y. X. et al. “Enabling High-temperature Nanophotonics for Energy Applications.” Proceedings of the National Academy of Sciences 109.7 (2012): 2280–2285. Copyright ©2012 by the National Academy of Sciencesen_US
dc.contributor.departmentMassachusetts Institute of Technology. Institute for Soldier Nanotechnologiesen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.approverCelanovic, Ivan L.
dc.contributor.mitauthorYeng, YiXiang
dc.contributor.mitauthorGhebrebrhan, Michael
dc.contributor.mitauthorBermel, Peter A.
dc.contributor.mitauthorChan, Walker R.
dc.contributor.mitauthorJoannopoulos, John D.
dc.contributor.mitauthorSoljacic, Marin
dc.contributor.mitauthorCelanovic, Ivan
dc.relation.journalProceedings of the National Academy of Sciencesen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsYeng, Y. X.; Ghebrebrhan, M.; Bermel, P.; Chan, W. R.; Joannopoulos, J. D.; Soljacic, M.; Celanovic, I.en
dc.identifier.orcidhttps://orcid.org/0000-0002-7184-5831
dc.identifier.orcidhttps://orcid.org/0000-0002-7244-3682
dc.identifier.orcidhttps://orcid.org/0000-0001-7232-4467
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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