Advanced Gate Technologies for State-of-the-art f[subscript T] in AlGaN/GaN HEMTs
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In this paper, the lower-than-expected frequency performance observed in many AlGaN/GaN high electron mobility transistors (HEMTs) has been attributed to a significant drop of the intrinsic small-signal transconductance (g[subscript m]) with respect to the intrinsic DC g[subscript m]. To reduce this gm-collapse and improve high frequency performance, we have developed a new technology based on a combination of vertical gate-recess, oxygen plasma treatment, and lateral gate-etch which has allowed us to fabricate AlGaN/GaN HEMTs with a record current-gain cutoff frequency (f[subscript T]) of 225 GHz for a gate length (L[subscript g]) of 55 nm, and 162 GHz for an L[subscript g] of 110 nm.
Date issued
2010-12Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology LaboratoriesJournal
Proceedings of the IEEE International Electron Devices Meeting (IEDM), 2010
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Chung, Jinwook W., Tae-Woo Kim, and Tomas Palacios. “Advanced Gate Technologies for State-of-the-art f[subscript T] in AlGaN/GaN HEMTs.” IEEE International Electron Devices Meeting (IEDM), 2010. 30.2.1–30.2.4. © Copyright 2010 IEEE
Version: Final published version
ISBN
978-1-4244-7419-6
978-1-4424-7418-5
ISSN
0163-1918