Performance Metrics and Empirical Results of a PUF Cryptographic Key Generation ASIC

Abstract

We describe a PUF design with integrated error correction that is robust to various layout implementations and achieves excellent and consistent results in each of the following four areas: Randomness, Uniqueness, Bias and Stability. 133 PUF devices in 0.13 μm technology encompassing seven circuit layout implementations were tested. The PUF-based key generation design achieved less than 0.58 ppm failure rates with 50%+ stability safety margin. 1.75M error correction blocks ran error-free under worst-case V/T corners (±10% V, 125°C/-65°C) and under voltage extremes of ±20% V. All PUF devices demonstrated excellent NIST-random behavior (99 cumulative percentile), a criterion used to qualify random sources for use as keying material for cryptographic-grade applications.