60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics
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We have developed a new self-aligned gate technology for InGaAs High Electron Mobility Transistors with non-alloyed Mo-based ohmic contacts and a very low parasitic capacitance gate design. The new process delivers a contact resistance of 7 Ohm-μm and a source resistance of 147 Ohm-μm. The non-alloyed Mo-based ohmic contacts show excellent thermal stability up to 600°C. Using this technology, we have demonstrated a 60 nm gate length self-aligned InGaAs HEMT with g[subscript m] = 2.1 mS/μm at V[subscript DS] = 0.5 V, and f[subscript T] = 580 GHz and f[subscript max] = 675 GHz at V[subscript DS] = 0.6 V. These are all record or near record values for this gate length.
Date issued
2010-12Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
Proceedings of the IEEE International Electron Devices Meeting (IEDM), 2010
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Kim, Tae-Woo, Dae-Hyun Kim, and Jesus A. del Alamo. “60 Nm Self-aligned-gate InGaAs HEMTs with Record High-frequency Characteristics.” IEEE International Electron Devices Meeting (IEDM), 2010. 30.7.1–30.7.4. © Copyright 2010 IEEE
Version: Final published version
ISBN
978-1-4244-7419-6
978-1-4424-7418-5
ISSN
0163-1918