Metrology for electron-beam lithography and resist contrast at the sub-10 nm scale
Author(s)
Duan, Huigao; Manfrinato, Vitor Riseti; Yang, Joel K. W.; Winston, Donald; Cord, Bryan M.; Berggren, Karl K.; ... Show more Show less
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Exploring the resolution limit of electron-beam lithography is of great interest both scientifically and technologically. However, when electron-beam lithography approaches its resolution limit, imaging and metrology of the fabricated structures by using standard scanning electron microscopy become difficult. In this work, the authors adopted transmission-electron and atomic-force microscopies to improve the metrological accuracy and to analyze the resolution limit of electron-beam lithography. With these metrological methods, the authors found that sub-5 nm sparse features could be readily fabricated by electron-beam lithography, but dense 16 nm pitch structures were difficult to yield. Measurements of point- and line-spread functions suggested that the resolution in fabricating sub-10 nm half-pitch structures was primarily limited by the resist-development processes, meaning that the development rates depended on pattern density and/or length scale.
Date issued
2010-11Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures
Publisher
American Vacuum Society (AVS)
Citation
Duan, Huigao et al. “Metrology for Electron-beam Lithography and Resist Contrast at the Sub-10 Nm Scale.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 28.6 (2010): C6H11. © 2010 AVS Science & Technology of Materials, Interfaces, and Processing
Version: Final published version
ISSN
1071-1023
1520-8567