Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors
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In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-μm-thick GaN buffer showed a three-terminal breakdown voltage of more than 700 V, while conventional AlGaN/GaN HEMTs of the same geometry showed a maximum breakdown voltage below 600 V. The improvement of the breakdown voltage has been associated with the planar contact morphology and lack of metal spikes in the Schottky-drain metallization.
Date issued
2010-02Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Bin Lu, E.L. Piner, and T. Palacios. “Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors.” IEEE Electron Device Letters 31.4 (2010): 302–304. © Copyright 2010 IEEE
Version: Final published version
ISSN
0741-3106