Show simple item record

dc.contributor.authorPalacios, Tomas
dc.contributor.authorKillat, Nicole
dc.contributor.authorTapajna, Milan
dc.contributor.authorFaqir, Mustapha
dc.contributor.authorKuball, Martin
dc.date.accessioned2012-10-01T19:07:52Z
dc.date.available2012-10-01T19:07:52Z
dc.date.issued2011-03
dc.identifier.issn0013-5194
dc.identifier.urihttp://hdl.handle.net/1721.1/73526
dc.description.abstractElectroluminescence (EL) spectroscopy in combination with drift-diffusion simulations was used to prove the presence of impact ionisation in AlGaN/GaN HEMTs illustrated on InGaN back-barrier devices. Regardless of the level of gate leakage current, which is dominated by contributions such as surface leakage current and others, EL enabled the revealing of hole generation due to impact ionisation. Hole currents as low as 10pA were detectable by the optical technique used.en_US
dc.description.sponsorshipUnited States. Office of Naval Research Global (N00014-08-1-1091)en_US
dc.language.isoen_US
dc.publisherInstitution of Electrical Engineers (IEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1049/el.2010.7540en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alike 3.0en_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/en_US
dc.sourceOther University Web Domainen_US
dc.titleEvidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrieren_US
dc.typeArticleen_US
dc.identifier.citationKillat, N. et al. “Evidence for Impact Ionisation in AlGaN/GaN HEMTs with InGaN Back-barrier.” Electronics Letters 47.6 (2011): 405.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.mitauthorPalacios, Tomas
dc.relation.journalElectronics Lettersen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsKillat, N.; Ťapajna, M.; Faqir, M.; Palacios, T.; Kuball, M.en
dc.identifier.orcidhttps://orcid.org/0000-0002-2190-563X
mit.licenseOPEN_ACCESS_POLICYen_US
mit.metadata.statusComplete


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record