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Contrast enhancement behavior of hydrogen silsesquioxane in a salty developer

dc.contributor.authorNam, Sung-Wook
dc.contributor.authorRooks, Michael J.
dc.contributor.authorYang, Joel K. W.
dc.contributor.authorBerggren, Karl K.
dc.contributor.authorKim, Hyun-Mi
dc.contributor.authorLee, Min-Hyun
dc.contributor.authorKim, Ki-Bum
dc.contributor.authorSim, Jae Hwan
dc.contributor.authorYoon, Do Yeung
dc.date.accessioned2012-10-19T14:13:58Z
dc.date.available2012-10-19T14:13:58Z
dc.date.issued2009-12
dc.identifier.issn1071-1023
dc.identifier.issn1520-8567
dc.identifier.urihttp://hdl.handle.net/1721.1/74146
dc.description.abstractThe authors investigated a contrast enhancement behavior of hydrogen silsesquioxane (HSQ) in a salty development system (NaOH/NaCl). Time-resolved analysis of contrast curves and line-grating patterns were carried out to investigate the unique properties of a salty development process. In NaOH developer without salt, the development process was saturated beyond a certain development time. On the other hand, the addition of salt enabled a continuous development, which was not observed in the pure NaOH development. The continuous thinning process enhances the contrast of HSQ in the salty developer, which allows a fast collapsing behavior in HSQ line-grating patterns. During development process, salt seems to have the role of modifying HSQ by breaking network bonds preferentially, leading to a continuous development rate.en_US
dc.language.isoen_US
dc.publisherAmerican Vacuum Society (AVS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1116/1.3245991en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleContrast enhancement behavior of hydrogen silsesquioxane in a salty developeren_US
dc.typeArticleen_US
dc.identifier.citationNam, Sung-Wook et al. “Contrast Enhancement Behavior of Hydrogen Silsesquioxane in a Salty Developer.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27.6 (2009): 2635. © 2009 American Vacuum Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.mitauthorYang, Joel K. W.
dc.contributor.mitauthorBerggren, Karl K.
dc.relation.journalJournal of Vacuum Science and Technology B Microelectronics and Nanometer Structuresen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsNam, Sung-Wook; Rooks, Michael J.; Yang, Joel K. W.; Berggren, Karl K.; Kim, Hyun-Mi; Lee, Min-Hyun; Kim, Ki-Bum; Sim, Jae Hwan; Yoon, Do Yeungen
dc.identifier.orcidhttps://orcid.org/0000-0001-7453-9031
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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